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| Transistor 2SC1518 Silicon NPN epitaxial planer type For high-frequency bias oscillation of tape recorders For DC-DC converter 5.90.2 Unit: mm 4.90.2 q q 2.540.15 (Ta=25C) Ratings 25 20 5 1.5 1 1 150 -55 ~ +150 Unit V V V A A W C C 0.45-0.1 1.27 1.27 +0.2 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 13.50.5 s Absolute Maximum Ratings 0.7-0.2 +0.3 Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances and high efficiency with a low-voltage power supply. 0.70.1 8.60.2 s Features 0.45-0.1 +0.2 s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Base to emitter saturation voltage Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25C) Symbol ICBO ICEO VCBO VCEO VEBO hFE1*1 hFE2 VBE(sat) VCE(sat) fT Cob Conditions VCB = 25V, IE = 0 VCE = 20V, IB = 0 IC = 10A, IE = 0 IC = 1mA, IB = 0 IE = 10A, IC = 0 VCE = 2V, IC = 500mA*2 VCE = 2V, IC = 1A*2 IC = 500mA, IB = 50mA*2 IC = 1A, IB = 50mA*2 150 12 *2 min typ 3.2 1 2 3 1:Emitter 2:Collector 3:Base EIAJ:SC-51 TO-92L Package max 100 1 Unit nA A V V V 25 20 5 90 50 100 1.2 0.5 330 V V MHz VCB = 10V, IE = -50mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz 20 pF Pulse measurement *1h FE1 Rank classification Q 90 ~ 155 R 130 ~ 220 S 185 ~ 330 Rank hFE1 1 Transistor PC -- Ta 1.2 1.2 Ta=25C 2SC1518 IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 Ta=75C 0.3 0.1 0.03 0.01 0.01 0.03 25C -25C VCE(sat) -- IC IC/IB=20 Collector power dissipation PC (W) 1.0 1.0 Collector current IC (A) IB=5.0mA 0.8 4.5mA 4.0mA 3.5mA 0.6 3.0mA 2.5mA 0.4 2.0mA 1.5mA 0.2 1.0mA 0.5mA 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 0.1 0.3 1 3 10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) IC -- IB 1.0 0.9 VBE(sat) -- IC Base to emitter saturation voltage VBE(sat) (V) VCE=2V Ta=25C 100 30 IC/IB=10 1.6 IC -- VBE(sat) Ta=25C 1.4 Collector current IC (A) Collector current IC (A) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 1 2 3 4 5 10 3 25C 1 75C 0.3 0.1 0.03 0.01 0.01 0.03 Ta=-25C 1.2 1.0 0.8 0.6 0.4 0.2 0 IC/IB=20 10 0.1 0.3 1 3 10 0 0.2 0.4 0.6 0.8 1.0 Base current IB (mA) Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) hFE -- IC 600 VCE=2V 200 180 500 fT -- I E Collector output capacitance Cob (pF) VCB=10V Ta=25C 50 45 40 35 30 25 20 15 10 5 0 -3 -10 -30 -100 1 3 Cob -- VCB IE=0 f=1MHz Ta=25C Forward current transfer ratio hFE Transition frequency fT (MHz) 0.3 1 3 10 160 140 120 100 80 60 40 20 400 300 Ta=75C 25C -25C 200 100 0 0.01 0.03 0.1 0 -1 10 30 100 Collector current IC (A) Emitter current IE (mA) Collector to base voltage VCB (V) 2 Transistor ICBO -- Ta 104 VCB=25V 105 2SC1518 ICEO -- Ta VCE=20V Area of safe operation (ASO) 10 Single pulse Ta=25C Collector current IC (A) 104 103 3 ICP 1 IC t=50ms 0.3 DC ICBO (Ta) ICBO (Ta=25C) ICEO (Ta) ICEO (Ta=25C) 103 102 102 0.1 10 10 0.03 1 0 20 40 60 80 100 120 140 160 1 0 20 40 60 80 100 120 140 160 0.01 0.1 0.3 1 3 10 30 100 Ambient temperature Ta (C) Ambient temperature Ta (C) Collector to emitter voltage VCE (V) 3 |
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